Infineon 17N80C3 800V 17A N Channel MOSFET TO-247 PackageThese Power MOSFETs are designed using the company's consolidated strip layout based MESH OVERLAY process. The result is very high voltage Power MOSFETs with outstanding performances. The strengthened layout, coupled with the companys proprietary edge termination structure, gives the lowest Rds(on) per area, unrivalled gate charge, and switching characteristics. Features New revolutionary high voltage technology Ultra low gate charge Periodic

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RMS Voltage 28V Maximum Average Forward Rectified Current 2A Rate of Change of Voltage (dv/dt) 10000V/µs Operating Junction Temperature -65°C to 150°C Package DO-214AC Quantity 2000 Pieces

1 µA Power-save mode 0

Small footprint

minimal power losses

A thyristor is a solid-state semiconductor device with four layers of alternating P- and N-type materials

Gain Drift vs

adaptive delay set

High speed (tf=100ns typ)

Free wheeling diode in converters and motor control circuits

leading to a cheaper design and smaller pc-board footprints

7M ohm Color Code Yellow